Method and apparatus for a polarization insensitive arrayed waveguide grating (AWG)

ABSTRACT

An arrayed waveguide grating (AWG) comprises at least two free space regions, a plurality of grating arms extending between the two space regions, a passivation layer formed over the arrayed waveguide grating and a plurality of inputs at least to one of the free space regions to receive a plurality of channel signals separated by a predetermined channel spacing. A depth of the passivation layer chosen by providing a TE to TM wavelength shift between TE and TM modes propagating through the arrayed waveguide grating being approximately less than or equal to 20% of a magnitude of the channel spacing.

REFERENCE TO RELATED APPLICATION

This application is divisional application of patent application Ser.No. 10/385,574, filed Mar. 10, 2003, which claims priority to U.S.provisional application Ser. No. 60/362,757, filed Mar. 8, 2002, whichapplications are incorporated herein by their reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to enhancement of optical components ordevices and more particularly to improvements in optical components anddevices employed in photonic integrated circuits (PICs) or PIC chips.

2. Description of the Related Art

In-based integrated optical components in a monolithic photonicintegrated circuit (PIC) chip have become a reality in recent times.Examples of such PIC chips are disclosed in U.S. patent application Ser.No. 10/267,331, filed Oct. 8, 2002 and U.S. patent application Ser. No.10/267,304, filed Oct. 8, 2002, both of which are incorporated herein bytheir reference. One version of such a PIC is a monolithic opticaltransmitter photonic integrated circuit, or TxPIC, fabricate din anInP-based alloy system which include an array of modulated lasersources, such as DFB or DBR laser arrays, with their outputs coupled toa wavelength selective combiner such as an arrayed waveguide grating(AWG), or such CW operated laser sources are coupled through acorresponding array of electro-optic modulators to an AWG. The lasersources are designed to each operate at a different wavelength andtogether form a wavelength grid designed to match a standardizedwavelength grid, such as the standard ITU wavelength grid.

The complexities in the manufacture of such TxPIC chips to specifiedwavelengths and desired wavelength grids is difficult to achieve in auniform manner providing good reproducibility and high yield. Forexample, if the passband of the AWG is off or shifted from the desiredwavelength grid and the laser source wavelength grid is as exactly asdesigned, the light from the laser sources may not pass through the AWGor, otherwise, may be severely attenuated from passing through the AWG.In general, if the AWG passband and the laser source wavelengths are notaligned, then an insignificant amount of light will emerge from theTxPIC chip rendering the chip of useless utility. To ease themanufacturing tolerances of the PIC AWG, as taught in Ser. No.10/267,331, supra, a plurality of vernier outputs are formed at theoutput of the wavelength selective combiner to the facet exit of thechip. Each vernier output represents a slightly different selection oflaser source wavelengths emerging from the AWG. Thus, chances areincreased that one of the AWG vernier outputs will optimally align tothe laser source wavelength grid relative to the passband of the AWG sothat the laser source wavelengths will be substantially matched to atleast one of the vernier outputs. As indicated, disclosure of thesecombiner vernier outputs can be found in Ser. No. 10/267,331, supra.

To test such a TxPIC chip, one approach is to measure the light out ofthe wavelength selective combiner for each laser source as a function ofboth applied current to the laser sources and their ambient temperature.If the TxPIC has any chance of utility, there is a temperature and rangeof currents where the laser wavelength sources will be substantiallyaligned with at least one of the combiner vernier outputs from the chip.For a discrete TxPIC chip, such testing can be accomplished by employinga large area detector or an integrating sphere. What would be moredesirable is if such testing could be accomplished while the PIC chipsremain in-wafer, i.e., prior to singulation of PIC die from an as-grownInP wafer, rather than later testing as a discrete PIC die. An advantageis obtained relative to advance knowledge of the PIC componentoperability and selection of a group of probable vernier outputs wherethe optimum combiner vernier output may lie or selection of the optimumvernier output exhibiting the highest matching quality of the laserwavelength grid to the passband and wavelength grid of the combiner.Compare this testing of individual die after their singulation whichrequires additional resources and time to mount the individual chips forsuch testing followed by individual testing of each chip for operabilityand optimum vernier output only to discover that the prepared chips arenot operative or adequate for use. It would be desirable to know beforewafer singulation which PIC die can be discarded because of their notedfailure during in-wafer testing. Also, it would be helpful to knowbefore wafer singulation which vernier output or, at least, subgroup ofvernier outputs are favored, for the best laser source wavelengthgrid/combiner passband match prior to wafer singulation.

InP-based wavelength selective combiners, such as, Echelle gratings,arrayed waveguide gratings (AWGs) or cascaded Mach-Zehnderinterferometers are of interest for a variety of applications. One ofthe most interesting of these applications is their deployment inphotonic integrated circuits (PICs) as multiplexing and/ordemultiplexing components or devices. The successful realization ofpractical devices utilizing, for example, InP-based AWGs, requiresseveral features which also represent problems to be solved:

-   -   1. The ability to environmentally, electrically and optically        passivate etched waveguides.    -   2. The ability to form a polarization insensitive device.    -   3. The ability to reduce the refractive index step between the        waveguide and the free-space region or slab of the AWG for        reduced insertion loss.    -   4. Compatibility with planar PIC processing.    -   5. The ability to isolate AWGs from active or activating        components placed on an AWG or on the PIC in close proximity to        an AWG, e.g., on-chip heaters or tuning electrodes.    -   6. Reduce the effects of side wall surface roughness in etching        the AWG waveguide ridge structure.

The conventional technique for accomplishing features 1-6 in the art isto utilize buried structures wherein InP regrowth is utilized to form anoverlayer or burying layer. However, buried waveguide structures aredifficult to achieve on a reproducible and repeated basis, requiresophisticated wafer fabrication and epitaxial growth, result in loweryield, and are generally more costly to manufacture. Ridge waveguidestructures are preferred for reasons of simplicity, yield and cost.However, the problems associated with items 1-6 above must be addressedin a rigid waveguide structure in order to realize a practical opticalcomponent or device.

Another aspect of PICs utilizing an optical combiner as an integratedcomponent is the design of the component to have low insertion loss(IL). With the increase of the number of components integrated on asingle chip, the requirements for wafer uniformity as well as uniformityin layer growth in composition and thickness becomes a more criticalissue. One way of lowering insertion losses in the AWG, for example,which is documented in the art, is to reduce the refractive index changein the transition coupling region between the multiple waveguides of theAWG and the free space region of the AWG. An example of this art isshown in the article of J. H. den Besten et al. entitled, “Low-Loss,Compact, and Polarization Independent PHASAR Demultiplexer Fabricated byUsing a Double-Etch Process”, IEEE Photonics Technology Letters, Vol.14(1), pp. 62-64, January, 2002. As shown in this article, shallow anddeep etched waveguides are combined such that a widening of thepropagating mode is provided from the deep ridge of the waveguide to theshallow ridge of the waveguide and thence to the free space region ofthe AWG. This provides for a gradual or monotonic and adiabaticexpansion of the mode through such a transition region decreasinginsertion losses and coupling losses between the waveguide and the freespace region as well as improving optical coupling between adjacentwaveguides in the transition region and coupled to the free spaceregion. What is desired is to improve the reduction in insertion losswithout requiring different, stepped etched depths as taught in deBesten et al. in the waveguides in these transition regions.

OBJECTS OF THE INVENTION

Therefore, it is an object of the present invention to overcome theaforementioned problems.

It is a further object of this invention to provide in-wafer testing andcoarse and fine selection of wavelength selective vernier outputs fromPIC chips including such components.

It is another object of this invention to reduce insertion loss inoptical components in PICs.

It is a still further object of this invention to passivate andplanarize the top surface of PIC chips.

SUMMARY OF THE INVENTION

According to this invention, an apparatus and method is providedrelative to a photonic integrated circuit (PIC) chip which includes aplurality of laser sources among other active and passive components onthe PIC chip providing output having different wavelengths of operation.The laser source outputs are optically combined with a wavelengthselective combiner that has a plurality of on-chip vernier outputs alongan output face of the combiner. Either a plurality of vernierphotodetectors or an integrating photodetector is formed at the ends ofthe vernier outputs. The integrating photodetector provides a precursorindicative of the potentially optimum vernier output(s) based upon on adegree of match between a wavelength grid formed by the laser sourcesand a wavelength passband of the optical combiner. The individualvernier photodetectors provide a means by which the optimum vernieroutput can be determined. The wavelength selective type of opticalcombiner is preferred but the invention can be practice with opticalpower couplers. The individual vernier photodetector can be formed onthe same PIC chip or on an adjacent PIC chip and utilized as such whilethe chips are still in their in-wafer form. Thus, the vernierphotodiodes can be or are later cleaved from the chip after thecompletion of in-wafer testing and wafer singulation.

In another aspect of this invention, the integrating photodetector canbe utilized as a coarse determination of a vernier subgroup of the totalgroup of vernier outputs that contains the optimum vernier output andthen, thereafter, a fine determination of the individual vernier outputin the identified vernier subgroup that provides an optimum vernieroutput. The fine determination can be accomplished by individualphotodetector monitoring of the determined vernier output subgroupeither through the individual in-chip vernier photodetectors afterremoval of any integrating contact or through contact testing of theindividual in-chip vernier photodetectors.

The in-chip vernier output photodetectors may also be employed to checkother on-chip optical components such as individual determination of thedesired bias points for in-chip laser source heaters, laser sources,electro-optic modulators or other on-chip photodetectors.

Further, according to this invention, an apparatus and method isprovided relative to a photonic integrated circuit (PIC) chip whichincludes a plurality of photodetectors provided at ends of higher orderBrillouin zone outputs of an optical combiner positioned on both sidesof a zero order Brillouin zone of the optical combiner that includes aplurality of vernier outputs from the n-chip wavelength selectivecombiner. The higher order Brillouin zone photodetectors providedetection outputs indicative of which zero order Brillouin zone vernieroutput has an optimum output based upon a degree of matching between thelaser source wavelength grid and the passband and wavelength grid of theoptical combiner. The higher order Brillouin zone photodetectors can beformed on the PIC chip or an in-wafer adjacent PIC and later cleavedfrom the chip upon the completion of testing.

Another feature, according to this invention, is a method of adjustingthe center channel wavelength of channel signal wavelengths from aplurality of laser sources in a photonic integrated circuit (PIC)relative to the center of a wavelength passband of an optical combiner,which is optically coupled to receive the outputs of the laser sourcesby selectively removing a portion of a passivation layer overlying thewavelength selective combiner to change the effective refractive indexin regions overlying the optical combiner.

A further feature according to this invention is a method of selectivelypatterning the passivation dielectric layer over the wavelengthselective combiner to achieve polarization insensitive performancedefined by the TE-TM wavelength shift being approximately less than orequal to 20% of a magnitude of the channel spacing.

Another feature according to this invention is photonic integratedcircuit (PIC) comprising a plurality of integrated optically coupledcomponents formed in a surface of the PIC, a passivating layer is formedover the PIC surface, the passivating layer characterized by comprisinga material selected from the group consisting of BCB, ZnS and ZnSe. Sucha passivation dielectric layer from this group is also provided as anoverlayer for the in-chip wavelength selective combiner, such as anInP-based AWG, to reduce insertion loss of the device by minimizing arefractive index step existing between free-space regions of the deviceand its input and output waveguides, such as, for example, ridgewaveguides.

It is a further feature according to this invention to utilize anadditional laser source or more integrated on the TxPIC chip employed asa testing source for the on-chip wavelength selective combiner. Such asource may be any kind of laser source, beside a DFB or DBR laser, suchas, but not limited to, a Fabry-Perot laser, a superluminescent source,and possibly an LED source. Such an additional laser source provides forhigher power output for in-wafer testing purposes. The light output fromthe laser must be within the passband of the wavelength selectivecombiner and has the advantage of providing a higher light output forconducting PIC in-wafer testing. An in-chip laser source for signalchannel operation could also be deployed for this function. However, itis necessary in such a case to forward bias other in-chip electro-opticcomponents in the optical path ahead of such laser sources, such as anelectro-optic modulator or a photodetector, which would otherwise beabsorptive of the laser source light. With forwarding biasing of suchcomponents, the light output from an active laser source should besufficient to be detected at the vernier photodetectors.

A still further feature according to this invention is the deployment of“cleave streets” in a thick wafer passivation overlayer to provide forcorrectly aligned and sharp cleaves in the singulation of a wafer intoseparate PIC chips. Such cleave streets are also applicable tosilicon-based integrated circuits utilizing such a passivating layer.

Other objects and attainments together with a fuller understanding ofthe invention will become apparent and appreciated by referring to thefollowing description and claims taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings wherein like reference symbols refer to like parts:

FIG. 1 is a schematic plan view of a photonic integrated circuit (PIC)comprising an optical transmitter photonic integrated circuit (TxPIC)that includes an additional laser source for in-wafer testing.

FIG. 2 is a schematic plan view of an optical transmitter photonicintegrated circuit (TxPIC) similar to FIG. 1 but further includes aplurality of on-chip vernier photodetectors for a plurality of vernieroutputs from the on-chip wavelength selective combiner for determiningoptical characteristics of the PIC.

FIG. 3 is a schematic plan view of an optical transmitter photonicintegrated circuit (TxPIC) similar to FIG. 1 but further includes anon-chip integrated photodetector array for determining opticalcharacteristics of the PIC.

FIG. 4 is a schematic plan view of two in-wafer transmitter photonicintegrated circuit (TxPIC) chips with a first PIC chip having a vernierphotodetector array for the testing of vernier outputs on an adjacent,second PIC chip.

FIG. 5 is a schematic plan view of an optical transmitter photonicintegrated circuit (TxPIC) similar to FIG. 1 except that it includescomplementary Brillouin zone outputs for aiding in predicting the bestTxPIC output vernier.

FIG. 6 is a schematic pan view of two in-wafer receiver photonicintegrated circuit (RxPIC) chips with a first PIC chip having broadbandlight sources coupled to the vernier inputs of an adjacent, second PICchip for use in determining optical characteristics of the second PICchip.

FIG. 7 is a plan view of an arrayed waveguide grating having an uppercladding of a low stress material having a higher index than air.

FIG. 8 is a plan view of a free space region having a refractive indexof nfree-space buried with a cladding layer having a refractive index,nclad.

FIG. 8A is a cross-sectional view taken along the line 8A-8A in FIG. 8.

FIG. 8B is a cross-sectional view taken along the line 8B-8B in FIG. 8.

FIG. 9 is a first embodiment comprising a partial perspective view ofinput waveguides to and output waveguides from a free space region,which waveguides may also be the input or output arms and grating armsof an AWG to provide for reduced insertion loss.

FIG. 10 is a cross-sectional view taken along the line 10-10 of FIG. 9.

FIG. 11 is a cross-sectional view taken along the line 11-11 of FIG. 9.

FIG. 12 is a cross-sectional view of a second embodiment of one input oroutput waveguide to or from a free space region, such as an opticalcoupled or an AWG, at a position further away from the free space regionthan the position illustrated in FIG. 13.

FIG. 13 is a cross-sectional view of a second embodiment of one input oroutput waveguide to or from a free space region, such as an opticalcoupled or an AWG, at a position closer to the free space region thanthe position illustrated in FIG. 12.

FIG. 14 is a cross-section of a first embodiment comprising one of theridge waveguides of a wavelength selective component, such as an AWG,utilizing a passivation or planarization layer such as BCB, ZnS or ZnSe.

FIG. 15 is a cross-section of a second embodiment comprising a ridgewaveguide utilizing a passivation or planarization alternating layers ofSi_(x)ON_(y) and BCB.

FIG. 16 is a cross-section of a third embodiment comprising a deep ridgewaveguide utilizing a passivation or planarization layer such as BCB.

FIG. 17 is a cross-section of a third embodiment comprising a shallowridge waveguide utilizing a passivation or planarization layer such asBCB.

FIG. 18 is a cross-section of a fourth embodiment comprising arib-loaded slab waveguide utilizing a passivation or planarization layersuch as BCB.

FIG. 19 is a cross-section of an embodiment employing “cleave streets”in the surface of passivating overlayers to provide for a clean cleavepoint.

DETAILED DESCRIPTION OF THE INVENTION

Reference is now made to FIG. 1 which illustrates a TxPIC chip 10 of atype presently in fabrication and operation to which the features ofthis invention including AWG testing and insertion loss reduction isapplied relative later described figures. It should be noted that theattributes of this invention are equally applicable to any other PICs,such as optical receiver photonic integrated circuit (RxPIC) chips whichare disclosed in U.S. patent application Ser. No. 10/267,304, supra andany other such PICs having integrated active and passive optical orelectro-optic components.

TxPIC chip 10 is an In-based chip, the structural details of which aredisclosed in U.S. patent application Ser. No. 10/267,331, supra. Asshown in FIG. 1, monolithic PIC chip 10 comprises groups of integratedand optically coupled active and passive components including anintegrated array of laser sources 12, such as DFB semiconductor lasersor DBR semiconductor lasers. Each laser source 12 operates at adifferent wavelength, λ₁-λ_(N), from one another where the group ofwavelengths provides a wavelength grid commensurate with a standardizedwavelength grid, such as the ITU standard grid. At the rear extent oflaser sources 12 are rear photodetectors 11, which are optional, whichmay be coupled to sources via waveguide 18A or may abut the rear extentor facet of a corresponding laser source. Photodetectors 11 may be, forexample, PIN photodiodes or avalanche photodiodes (APDs). The lasersources may be directly modulated or may be provided with an associatedelectro-optic modulator as shown in the example here. The CW outputs oflaser sources 12 are shown coupled to electro-optic modulators 14.Modulators 14 may be electro-absorption modulators (EAMs) orMach-Zehnder modulators (MZMs) as detailed in patent application Ser.No. 10/267,331, supra. Modulators 14 may be optically coupled to acorresponding laser source 12 via waveguide 18B or may abut the forwardextent or front facet of a corresponding laser source. Modulators 14each apply an electrical modulated signal to the CW light from lasersources 12 producing an optical modulated signal for transmission on anoptical link or span. The modulated outputs from modulators 14 arecoupled via waveguide 18C to a front photodetectors 16. Photodetectors16 are optional and may alternatively be optically coupled to modulators14 in abutting relationship. Photodetectors 16 may also be fabricatedoff-axis of the laser source output by means of an on-chip optical tapto provide a small portion of the modulated output to the photodetector.Front photodetectors 16 may be PIN photodiodes or avalanche photodiodes(APDs). Photodetectors 11 and 16 may be employed to determine the outputpower from the respective laser sources 12. Alternatively,photodetectors 16 may also function as variable optical attenuators(VOAs) in order to equalize the output power across all of the lasersources 12. On the other hand, photodetector 16 may be employed ason-chip semiconductor optical amplifiers (SOAs). Also, a differentfrequency tone may be applied to each photodetector 16 to provide forlaser source tagging as described in U.S. patent application Ser. No.10/267,330, filed Oct. 8, 2002, which application is incorporated hereinby its reference.

As indicated above and as explained in more detail in patent applicationSer. No. 10/267,331, modulators 14 may be fabricated aselectro-absorption modulators (EAMs) or Mach-Zehnder modulators (MZMs).The modulated optical signal outputs of modulators 14, via frontphotodetectors 16, are respectively coupled to an on-chip wavelengthselective combiner, shown here as an arrayed waveguide grating or AWG 20via optical input waveguides 18. It is within the scope of thisinvention to include other wavelength selective combiners ordecombiners, as the case may be, such as Echelle gratings or cascadedMach-Zehnder interferometers (MZIs). Also, it is within the scope ofthis invention to practice the invention in connection withnon-wavelength selective type of optical combiners, such as powercouplers, star couplers or MMI couplers. Each of the lasersource/modulator combinations or, for example, semiconductormodulator/lasers (SMLs) is, therefore, representative of an opticalsignal channel on TxPIC chip 10. There is a plurality of N channels oneach TxPIC chip 10 and, in the case here, ten such channels are shown asnumbered one through ten in FIG. 1. There may be less than 10 channelsor more than 10 channels formed on chip 10. In the case here, the outputof each signal channel is coupled to a respective waveguide 18(1) to18(10) to the zero order Brilloum zone input of AWG 20.

Each signal channel is typically assigned a minimum channel spacing orbandwidth to avoid crosstalk with other optical channels. Currently, forexample, 50 GHz, 100 GHz or 200 GHz are common channel spacings. Thephysical channel spacing or center-to-center spacing 28 of the signalchannels may be 100 μm, 200 μm, or 250 μm or more to minimize electricalor thermal cross-talk at data rates, for example, of 10 Gbit per sec orgreater and facilitate routing of interconnections between bondpads ofmultiple PIC elements. Although not shown for the sake of simplicity,bonding pads may be provided on the surface of PIC chip 10 toaccommodate wire bonding to the on-chip electro-optic components.

Metal interconnects between bondpads (not shown) and electro-opticcomponents are at least partly formed on a surface of an isolationpassivation medium formed over PIC chip 10. The medium is employed topassivate and permit uniform planarization of the surface of chip 10.Such a medium may be, for example, polyimide, BCB, ZnS or ZnSe. In thisconnection, all the bonding pads are formed by forming vias through theplanarized medium after which metal vias are formed. Electricalconnection between ground bondpads and a ground plane formed in PIC chip10 from the planarized surface of the passivation medium. Bondpads maybe supported from the surface of the top semiconductor layer of chip 10,such as a semiconductor contact layer, for example p⁺-InGaAs, by meansof metal vias formed through the planarized surface of the passivationmedium. Details concerning the foregoing bondpad layout other attributesthereof are disclosed in U.S. application, Serial No. ______, filed______, which application is incorporated herein by its reference.

As indicated above, the respective modulated outputs from electro-opticmodulators 16 are coupled into optical waveguides 18(1) to 18(10) to theinput of AWG 20. AWG 20 comprises an input free space region 19 coupledto a plurality of diffraction grating waveguides 21 which are coupled toan output free space region 22. The multiplexed optical signal outputfrom AWG 20 is provided to a plurality of output waveguides 23 whichcomprise output verniers along the zero order Brillouin zone at outputface 22A of free space region 22. Output waveguides 23 extend to outputfacet 29 of TxPIC chip 10 where a selected vernier output 23 may beoptically coupled to an output fiber (not shown). The deployment ofmultiple vernier outputs 23 provides a means by which the best oroptimum output from AWG 20 can be selected having the best match of thewavelength grid passband of AWG 20 with the established wavelength gridof the group of channel signal outputs from the array of laser sources12. Seven vernier outputs 23 are shown in FIG. 1. It should be realizedthat any number of such vernier outputs may be utilized beginning withthe provision of two of such vernier outputs. Also, the number of suchvernier outputs may be an odd or even number.

In operation, AWG 20 receives N optical signals, λ₁−λ_(N), from coupledinput waveguides 18 which propagate through input free space region 19where the wavelengths are distributed into the diffraction gratingwaveguides 21. The diffraction grating waveguides 21 are plurality ofgrating arms of different lengths, ΔL, relative to adjacent waveguides21, so that a predetermined phase difference is established inwaveguides 21 according to the wavelengths λ₁−λ_(N). Due to thepredetermined phase difference among the wavelengths in grating arms 21,the focusing position of each of the signals in grating arms 21 inoutput free space region 22 are substantially the same so that therespective signal wavelengths, λ₁−λ_(N), are focused predominately atthe center portion or the zero order Brilloum zone of output face 22A.Verniers 23 receive various passband representations of the multiplexedsignal output from AWG 20. Higher order Brilloum zones along output face22A receive repeated passband representations of the multiplexed signaloutput at lower intensities. The focus of the grating arm outputs to thezero order Brillouin zone may not be uniform along face 22A comprisingthis order due to inaccuracies inherent in fabrication techniquesemployed in the manufacture of chip 10. However, with multiple outputverniers, an output vernier can be selected having the best or optimumsignal output in terms of power and strength.

Also shown in FIG. 1 is an additional laser source 34 coupled directlyto the zero order or higher Brillouin zone input of AWG 20 via opticalinput waveguide 35. Laser source 34 may be any type of semiconductorlaser including a Fabry-Perot laser source or a superluminescent sourceor possibly a LED source, such as one with some coherency within thebandwidth of laser sources 12. Laser source 34 is employed to provide ahigh intensity on-chip light source to provide a comparatively on-chiphigher intensity light output at output verniers 23 which is deployed toachieve optimum optical coupling alignment between a finally selectedvernier output and an optical fiber terminus. Alternatively, there canbe more than one such laser source 34 for purposes of testing PIC 10,but more particularly for redundancy should on the these sources fail tooperate.

Also, PIC chip 10 may include waveguide 27 coupled to on-chipphotodetector 28 which may be employed to monitor back reflectionintensity from front facet 29 during the process of forming anantireflection (AR) coating on the surface of facet 29. The finalthickness of the AR coating is achieved at the point of received lowestlevel of back reflected light from facet 29 is received by thephotodetector via AWG 20. Other details relative to this AR coated facetmonitoring can be gleaned from the description of FIG. 9 in patentapplication Ser. No. 10/267,331, supra.

Reference is now made to FIG. 2 which illustrates substantially the sameTxPIC chip 10 in FIG. 1 except that TxPIC chip 10A includes an array ofphotodetectors 30 each of which is respectively coupled to a vernieroutput 23. Photodetectors 30 may be, for example, PIN photodiodes oravalanche photodiodes (APDs). These detectors 30 can be each selectivelymonitored while chip 10A still remains part of a wafer to determinewhich output vernier provides the optimum vernier output from AWG 20after testing, for example, AWG 20 via laser source 34 and testing therespective sources 12 and their accompanying heaters (not shown) as wellas electro-optic modulators 14 for their photoluminescence (materialbandgap) and/or bias point. After chip 10A is singulated from its wafer,the portion 45 of the array of photodetectors 30 may be removed fromchip 10A by means of cleaving as indicated by dotted line 44 in FIG. 2.Having previously identified the optimum vernier output 23, chip 10A maybe submounted for further testing and provided in a module package thatincludes alignment of an optical fiber input terminus to the optimumvernier output.

As used herein, “optimum vernier output” means the vernier outputexhibiting the substantially highest power output and the best matchbetween the laser source wavelength grid and the wavelength grid and/orpassband of the optical combiner employed.

Reference is now made to FIG. 3 which illustrates substantially the sameTxPIC chip 10 of FIG. 1 except that TxPIC chip 10B of FIG. 3 includes arow of integrating photodetectors 40 optically coupled to receive thevernier outputs from AWG 20. Thus, photodetectors 40 are fabricated inTxPIC die of an In-based wafer along with the other optical componentscomprising TxPIC 10A and function as in-chip photodetectors 40, one eachof the vernier outputs 23, to provide for in-wafer testing of vernieroutputs 23. Photodetectors 40 function as an integrating detector bydeployment of single electrode contact 42 electrically coupled to all ofthe photodetectors as shown in FIG. 2. As such, the formed integratingdetector is employed to measure the total amount of light that isemerging from AWG 20 along the zero order Brillouin zone of output face22A of AWG 20. What is important to discern from a testing perspectiveis that the laser source wavelengths are aligned to the passband of theAWG. While testing the output of each individual photodetector 40 wouldnice to ascertain the individual output from each of the vernier outputs23, it may not be necessary to do so, although the approach of FIG. 2may be considered more preferable, it is more complex in terms or timefor testing of individual detectors. Instead in FIG. 3, the total,combined output of the array of photodetectors 40 is employed employinga single contact metallization for all of the photodetectors. Thiscreates the equivalent of an on-chip integrating sphere wherein thetotal light emerging from AWG 20 through all of the vernier waveguidesis measured by the array of photodetectors 40 which, as previouslyindicated, can be referred to as an integrating detector. The output 46from the integrated detector is provided at connected bond wire 46 to anoff-chip detection circuit. Photodetectors 40 may be positioned on TxPICchip 10B such that they can be readily cleaved from the chip alongcleave line 44 after completion of their utility of in-wafer testing andchip singulation from the wafer. The vernier outputs 23 not to utilizedas a PIC chip output can be alternatively deployed as optical taps forlater monitoring of the PIC chip output, such as, for example, duringinitial transmitter module testing or field testing.

The testing approach of FIG. 3 is most useful in the situation where theon-chip power is not sufficient for individual photodetector testingduring the testing phase of an in-wafer PIC. The total power across allvernier outputs detected by the integrating detector 40, which iselectrically measured electrically via the total optical output receivedfrom photodetectors, functions as a precursor indication of the level ofsuccessful matching of the laser source wavelength grid to the designedpassband of AWG 20 of in-wafer TxPIC chip 10A under test. The benefitachieved is that if the total power is not sufficient high or above apredetermined threshold, the tested chip can be discarded uponsingulation of the wafer or possibly trimmed or tuned to bring about abetter match between the laser source wavelength grid and the passbandof AWG 20. Subsequently, during wafer singulation, portion 45 of the PIC10A that includes photodetectors 40 can be cleaved from the chip alongcleave line 44 and discarded.

In the embodiments of FIGS. 2 and 3, it should be realized that testingfor the optimum vernier output includes the selective bias operation ofone or more active optical components in the PIC during the testingphase. As an example, a selected laser source in an in-wafer PIC chipmay be biased to test its output along with an applied bias to otheractive on-line components such as modulator 14 and photodetector 16providing for their transparency of their laser source light. Theirpositive biasing, therefore, aids in permitting the laser source lightto be tested at vernier outputs 23. Also, biasing of these othercomponents can be employed to check to the component photoluminescenceand determine if the waveguide core material bandgap is suitable orexpected.

Also, importantly, it should be realized that testing for the optimumvernier output of a selected PIC, temperature on the wafer can be variedor the ambient local temperature of a laser source 12 under test can bevaried via its associated laser source heater (not shown) by varyingheater bias. By varying heater bias for each respective laser source 12tested in an in-wafer PIC, the optimum vernier output can be selectedbased upon the laser sources operating at their substantially designatedand desired operational wavelength through changes to heater bias.Examples of such laser source heaters and biasing can be understood fromU.S. patent application Ser. No. 10/267/330, supra.

Alternatively, photodetectors, such as some of the photodetectors 30 and40 of FIGS. 2 and 3, may be deployed at multiple Brillion zone outputsof the AWG or only at higher order Brillouin zone outputs of the AWG forin-wafer measurements for the same purposes. Also, photodetectors 30 or40 can be formed adjacent to the vernier outputs with optical tapsdirecting a portion of their light from a corresponding vernier outputto its corresponding photodetector. In this case, the photodetectors mayremain as part of the singulated PIC chip and some of the photodetectorsmay be deployed for output signal monitoring during transmitter moduletesting, field testing or during transmitter module in-service usage.Also, it is within the scope of this invention to use the testingapproaches for in-wafer photonic integrated circuits, as discussedrelative to FIGS. 2 and 3 as well as to be discussed in connection withFIGS. 4 and 5, for PIC chips after wafer singulation. Further, asalready previous indicated, it is within the scope of this invention touse these testing approaches in connection with PICs employing anoptical combiner, such as a power coupler, a star coupler or MMIcoupler, or other wavelength selective optical combiner, such as anEchelle grating or a cascaded Mach-Zehnder interferometers.

Reference is now made to FIG. 4 which should be considered as a combinedembodiment of FIGS. 2 and 3 except that photodetectors 30 or 40 areformed in an adjacent PIC chip relative to a plurality of such PIC chipsformed in a wafer. As shown in FIG. 4, photodetectors 30 or 40 areformed in TxPIC chip 10(1) and are employed for testing vernier outputs23 of an adjacent TxPIC chip 10(2). Thus, when in-wafer testing iscompleted, as described previously, the utility of photodetectors 30 or40 are no longer needed, i.e., in-wafer determination and selection ofthe optimum vernier output has been accomplished. Upon wafersingulation, the photodetectors remain dormant on the TxPIC chips.

Reference is now made to FIG. 5 which illustrates the same TxPIC chip 10of FIG. 1 except that TxPIC chip 10C of FIG. 5 does not have vernieroutput photodetectors but includes at least one additional higher orderor first order −1 and +1 Brillouin zone outputs 50 and 52 on either sideof vernier outputs 23 that are formed along the zero order Brillouinzone output face 22A of output free space region 22. First order outputs50 and 52 respectively have photodetectors 54 and 56 formed at theirterminus used for in-wafer testing the AWG passband. The —IBZ output atdetector 54 is deployed to detect wavelengths that are shorter thanexpected indicating that the center of the wavelength grid passband ofAWG 20 is offset to the −1 BZ side which, and if of sufficient shiftoffset, indicates that the passband of AWG 20 is misaligned relative tothe laser source wavelength grid, in which case, chip 10B may have to bediscarded during wafer singulation. On the other hand, if the offset iswithin acceptable tolerances, it is possible to predict that one of thevernier outputs closest to the −1 BZ side is most likely to be favoredfor an optimum vernier output from AWG 20 thereby eliminating the anyfurther need to subsequently test those vernier outputs closest to +1 BZoutput side for optimum output via detector 56. Conversely, the +1 BZoutput at detector 56 may be deployed to detect wavelengths that arelonger than expected indicating that the passband of AWG 20 is offset tothe +1 BZ side which, and if of sufficient shift offset, indicates thatthe passband of AWG 20 is misaligned relative to the laser sourcewavelength grid, in which case, chip 10C may have to be discarded duringwafer singulation. On the other hand, if the offset is within acceptabletolerances, it is possible to predict that one of vernier outputsclosest to the +1 BZ side is most likely to be favored for an optimumoutput from AWG 20 thereby eliminating the need to subsequently testthose vernier outputs closest to the −1 BZ output side for output sidefor optimum output via detector 54. In either case above, depending uponthe degree of short or long wavelengths appearing on either the −1 BZ or+1 BZ side, respectively, such as through the use of a spectrum analyzerand/or a power meter, can be employed to predict which side verniers arelikely to contain an optimum vernier output. In other words, the degreeor amount of such shorter or longer wavelengths on a prediction scalecan indicate which of the three vernier outputs of the seven vernieroutputs, on either side of the central vernier output, is most likelythe optimum vernier output.

By the same token, if the offset detected via photodetector 54 indicateslow power output with a limited or no significant amount of shortwavelengths, it is possible to predict that one of the vernier outputsclosest to the +1 BZ side is most likely to be favored for an optimumoutput from AWG 20. On the other hand, if the offset detected viaphotodetector 56 indicates low power output with a limited or nosignificant amount of long wavelengths, it is possible to predict thatone of the vernier outputs closest to the −1 BZ side are most likely tobe favored for an optimum output from AWG 20. Thus, in all of thesecases, it is possible to predict which of the output verniers of theseveral outputs, as measured from the central vernier(s), is most likelyto be favored for coupled multiplexed signal output from chip 10C priorto wafer singulation. Upon wafer singulation, photodetectors 54 and 56may be removed from chip 10C by cleaving chip portion 45 from the chipalong cleave line 44. Alternatively, instead of integratedphotodetectors 54 and 56 on chip 10B, the −1 BZ and +1 BZ outputs may beoptically detected by off-chip photodetectors through optical couplingof their outputs from chip 10C.

Also, it is within the scope of this invention shown in FIG. 5 to usethis testing approach for photonic integrated circuits in-wafer as wellas out-of-wafer, after wafer singulation. Further, it is within thescope of this invention to employ the testing approach of FIG. 5 inconnection with PICs employing an optical combiner, such as a powercoupler, a star coupler or MMI coupler, as well as other wavelengthselective optical combiners, such as an Echelle grating or a cascadedMach-Zehnder interferometers. Also, it is within the scope of thisinvention to not cleave portion 45 from chip 10C but rather deployphotodetectors 54 and 56 in later testing or monitoring of the combinedsignal output from the PIC optical combiner such as described in U.S.patent application Ser. No. 10/267,330, supra.

Reference is now made to FIG. 6 which illustrates two in-wafer RxPICchips 24(1) and 24(2). In the case here, each RxPIC chip 24 comprises awavelength selective decombiner, shown here as AWG demultiplexer 25,having a plurality of vernier inputs 26, an input free space region 27,a plurality of diffraction arms 28 and an output free space region 29.Channel signals are demultiplexed by AWG 25 from a combined channelsignal input received at an optimum input vernier input 26 and therespective channel signals are provided to a photodetector 32 forconversion from an optical signal into an electrical signal. Ten suchsignal channels are shown although it should be readily understood thatmore of such channels may be included on a chip 24. More detail relatingto RxPIC chips 24 is disclosed in patent application, Serial No.10/267,304, supra.

In FIG. 6 each in-wafer PIC chips 24(1) and 24(2) includes an array ofbroadband light sources 33 also integrated onto the chip. These lightsources 33 are optically coupled, respectively, to vernier inputwaveguides 26 of an adjacent chip PIC, such as shown in the case herefor PIC chip 24(2). Light sources 33 have a broadband spectrum whichspans the wavelength range of the free spectral range (FSR) of AWG 25 orapproximate the total wavelength bandwidth of the channels signalsreceived by the PIC. Examples of such sources are Fabry-Perot lasers,superluminescent lasers, LEDs or forward biased photodetectors, such asPIN photodiodes.

Sources 33 on a neighboring PIC, such as RxPIC 24(1), are employed toverify the optical characteristics and functionality of the adjacentRxPIC 24(2) via its vernier inputs 26. By forward biasing sources 33, togenerate light, such as ASE light, the photocurrent developed atphotodetectors 32 may be accessed via appropriate test probes andemployed to estimate or determine the integrity of AWG 25, associatedinput waveguides 26 and output waveguides 31 as well as the integrity ofany butt joints or the contacts (not shown) of photodetectors 32.Sources 33 will not subsequently interfere with later on with RxPICfunctionality since they reside with a neighboring RxPIC and are cleavedaway after in-wafer testing. The structure of sources 33, for example,could be the same fabrication structure as photodetectors 32 but areforward biased to provide light output during their use in in-wafertesting. The use of such in-wafer light sources 33, as well asphotodetectors 30 and 40 discussed in previous embodiments, establish ascreening criteria for checking the integrity and operability ofintegrated active and passive optical components in separate PICs thatare still un their in-wafer form thereby saving appreciable test timeand resource costs that would be encountered if the PIC chips were,first, singulated from the wafer and thereafter properly mounted toundergo testing on a one-by-one basis.

Reference is now made to FIGS. 7 and 8 and the deployments of materialsfor planarizing and passivating the active and passive opticalcomponents formed in a PIC. The particular example shown here is forwavelength selective decombiner 25. However, it will be understood bythose skilled in the art that passivation and planarization to bedescribed relative to FIG. 7 is equally applicable to other types of PICchips including, but not limited to, TxPIC, transceiver photonicintegrated circuit (TRxPIC) chips or SMLs. Shown in FIG. 7 is awavelength selective decombiner comprising AWG 25. The surface of AWG25, as well as the surface of the RxPIC chip, are isolated andpassivated with a medium formed over the surface of the PIC. Suchmaterials may be also employed for planarizing and passivating RxPICchips too. A preferred choice for such a medium is the material, BCB(benzocyclobutene polymer), which is advantageous in that it provides(1) a very low stress, for example, about 20 to 30 MPa, (2)planarization with a dielectric constant of about n=1.6, whichdielectric constant is between air=1 and InP having a dielectricconstant of about n=3.2, and (3) an ability to easily planarize as-grownsemiconductor structures. Consequently, BCB may be utilized toenvironmentally, electrically and optically passivate AWG 25.Furthermore, BCB can be easily patterned after it has been planarized.Also, SiOX, SiNx and SixONY are also alternatives but BCB is preferredbecause of its low stress properties and ability to easily planarize. Byplanarization herein, we mean that the topography of the integratedcomponents across the PIC, such as active and passive optical componentsincluding ridge waveguides, are covered with the medium which may bemade thereafter more uniformly planar by an etchback, for example.However, it does not mean or necessarily entail that PIC planarizedsurface is perfectly or essentially flat.

Such a BCB medium may be patterned over RxPIC AWG 25 in FIG. 7 toproduce a polarization insensitive device. In this connection, note thatin FIG. 7, a portion of the BCB overlayer 60 is patterned in a region at62 by removing a portion of the spin-on BCB material in this region toprovide for a balance in the TE to TM mode ratio through a change inbirefringence (An) along the length of the AWG diffraction grating arms28. As is known, the TE mode propagates faster than the TM mode throughwaveguides 28 causing polarization mode dispersion (PMD). By reducingthe thickness of the overlayer 60 of BCB in a patterned region overwaveguides 28, such as indicated by a patterned region 62, therefractive index is lowered in this region due to a reduction of the BCBthickness so that the velocity or speed of TM mode of the propagatinglight will increase and can be selectively made, by the adjustment ofthe size and depth of region 62, to match the velocity or speed of theTE mode because of the relationship of, V/n, where V is the velocity ofthe TE mode and n is refractive index of the overlying layer of BCB. Thepattern size is changed and the depth of BCB overlayer removal is chosenso as to achieve polarization insensitive performance defined by theTE-TM wavelength shift being approximately less than or equal to 20% ofa magnitude of the channel spacing. The pattern 62 is shaped such that achange in depth of BCB thickness is of the greatest length along theshortest arm 28(1) and monotonically decreases in length of BCBthickness reduction at the longest arm 28(N) as shown in FIG. 7.

It should be noted that for AWG 20 in TxPIC chip 10, such patterning maynot be necessary because the strain of the In-based deposited layers maybe utilized to substantially fix the polarization mode, and chip 10 andthe waveguide channels comprising AWG 20 are not large enough to permitrandomizing of the polarization modes. However, the patterning processcan be utilized in PIC implementations where polarization modedispersion (PMD) is sufficiently significant. The patterning region 62,therefore, has more application to an RxPIC chip 24 of FIG. 6 or in aTRxPIC because scattering centers in the optical transmission fiberrandomize the TE and TM polarization modes of the multiplexed channelsignals one into the other.

With reference to FIG. 8, the magnitude of the refractive index stepbetween a free-space region 64 and waveguides 66 can contributesignificantly to insertion loss of an optical coupler or a free spaceregion in an AWG. In this connection,Δn≅|n _(clad) −n _(fs)|

-   -   where n_(clad) is the effective refractive index of the material        forming the cladding overlayer, such as BCB, and n_(fs) is the        effective refractive index of the free space region 64. By        effective refractive index, we mean the effective index profile        through the deposited semiconductor layers in the region of the        cladding adjacent to the waveguide core and the effective index        profile through the deposited semiconductor layers in the region        of the free space region. The smaller the Δn, the lower the        insertion loss of the coupler. In a buried InP waveguide        structure, n_(clad) is approximately 3.3, making Δn small and,        hence minimizing its contribution to insertion loss. In a        ridge-waveguide structure, such as seen in FIGS. 8A and 8B, for        example, n_(clad), is significantly lowered by the presence of        air (n=1), making the Δn contribution to the insertion loss more        significant. However, this increased contribution to Δn can be        reduced by employing a higher refractive index material, for        example, BCB where n is approximately 1.6, or employing ZnS        where n is approximately 2.2, or employing ZnSe where n is        approximately 2.4.

As shown in FIGS. 8A and 8B, a cross-section of one of the several ridgewaveguides 48 leading to a free space region 46 of an opticalcombiner/decombiner may be comprise, for example, of an InP alloy systemcomprising an InP substrate 70 upon which is deposited a lower claddinglayer 72 of InP, followed by a waveguide core 74 comprising, forexample, AlInGaAs or InGaAsP, followed by an upper cladding layer 75 ofInP. To form a ridge waveguide 46, an etchback is performed a shown inthe art. Then, a passivating layer 77, such as BCB, is deposited over aformed ridge waveguide 76A and 76B of the multiple waveguides 48 as seenin FIGS. 8A and 8B.

With respect to FIG. 8A, ridge waveguide 76A is a shallower ridge withthinner cladding layers 72 and 75, for example, so that a portion orevanescent tail of the propagating mode 79 of the signal light extendsinto passivation layer 77. The effective refractive index as experiencedby the mode 79 in waveguide 76A can be altered by reducing the thicknessof passivation layer 77 as indicated by arrow 78 over waveguide 76Athereby changing the center wavelength of the combiner/decombinerrelative to the center of the passband thereof so that the centerwavelength of a group of wavelengths, such as channel wavelengths, inwaveguides 48 are substantially aligned to the center of the wavelengthpassband of the optical combiner/decombiner.

With respect to FIG. 8B, ridge waveguide 76B is much deeper whereincladding layers are sufficiently thick to fairly well contain theevanescent tails of propagating mode 79. In this case, the effectiverefractive index experienced by mode 79 can be altered by reducing thethickness of BCB layer 77 to a depth, for example, below the top ofridge waveguide 76B as seen at 71. In either case of a shallow or deepridge waveguide 76A or 76B, the effective refractive index experiencedby mode 79 can be changed thereby changing the center wavelength of thecombiner/decombiner relative to the center of the passband thereof sothat the center wavelength of a group of wavelengths, such as channelwavelengths, in waveguides 48 are substantially aligned to the center ofthe wavelength passband of the optical combiner/decombiner.

The foregoing is also applicable to optical multiplexers/demultiplexerssuch as AWGs. The patterning of the overlayer of BCB may be utilized toimprove or tune the wavelength response of an AWG or coupler as well asadjust the power in the waveguide input side, such as power equalizationamong different channels, and reduce insertion loss by reducing theindex step to the free space region of an AWG or to a coupler. Animprovement approach is to have the BCB cladding layer increase inthickness over the waveguides 48 progressively toward free space region46. This reduces the effective refractive index step along thetransition region which in turn reduces the effective reflection at thefree space region connection which reduces the insertion loss of the AWGor coupler.

The step for the purpose of reducing the BCB overlayer thickness toachieve center wavelength alignment may have to be repeated until thedesired thickness is achieved providing optimum center wavelengthalignment to the free space region 46. a method of accomplishing centerwavelength alignment of an AWG in a TxPIC, for example, is as follows.First, the entire PIC chip or a wafer of such chips is passivated with alow stress overlayer of BCB or other mentioned passivation materials,such as SiN_(x), in particular Si₃N₄. Next, the active component regionof the PIC chip, such as modulated sources comprising modulated lasersources or laser sources with electro-optic modulators and any PICassociated photodetectors, are masked with a material that is resistantto an RIE etch to be deployed to etch the passivation overlayer presentin the AWG region. Next, if the passivation has been done on the waferlevel, the wafer is singulated into PIC die which then individuallyattached to a submount. Next, a measurement is taken of the alignment ofthe center wavelength of laser source wavelength grid to the AWGwavelength grid and passband through the employment of thephotodetectors in the previous embodiments and/or with spectrumanalyzer. If there is a misalignment of the center wavelength of thesetwo grids, PIE is applied to the exposed region of the chip comprisingthe AWG region (note that the active region of the chip remainsprotected) and etch the passivation over layer of Si₃N₄ or BCB. Next, ameasurement is, again taken to check the alignment of the center channelwavelength of the laser source wavelength grid to the AWG wavelengthgrid. If the alignment is better but still off, the above mentioned RIEstep and re-measurement steps are repeated until there is substantialalignment of the grids.

The above process can also be practice by only cladding the passivationlayer over the AWG region and mask the unpassivated active componentregion of the chip. Also, it is advantageous to apply this method on thechip level rather than the wafer level because correction for processingvariations in the epitaxial growth across the wafer, which effects theeffective refractive index, can be compensated for by processing thecladding overlayer of the individual chips and tune the effectiverefractive index across the AWG to achieve center channel wavelengthalignment of the wavelength grid of the laser sources with that of theAWG. Center wavelength tuning, for example, may be used to tuneapproximately 0.24 nm by varying the thickness of a Si₃N₄ passivationoverlayer by about 1000 Å.

Many complex waveguide structures have been proposed in the art, such asexemplified in the J. H. den Besten et al article, supra, to lessen theeffective refractive index change at a ridge waveguide to free spacetransition region of an optical coupler. We have discovered a simpleapproach which is to alter the channel or groove depth between ridgewaveguides or the channel, or groove side wall angle of the ridgewaveguides, or both, leading to the transition point between thewaveguides and a free space region as illustrated in FIGS. 9-11. InFIGS. 9-11, there is illustrated a free space region 50 having aplurality of input ridge waveguides 52 coupled at one side of free spaceregion 50 and a plurality of formed output ridge waveguides 54 coupledto region 50 at opposite side. A channel, trench or groove 56 is formedbetween each set of waveguides 52 or 54, as best seen in FIGS. 10 and11, having a V-shaped side wall bottom portion 58. As shown in bothFIGS. 10 and 11, the ridge waveguide structure for waveguides 52 or 54may be comprised of an InP substrate 80 upon which are deposited aplurality of InP-based layers, employing MOCVD, comprising, for example,in sequence, n-InP confinement layer 82, core waveguide region 84comprising either InAlGaAs or InGaAsP, p-InP confinement layer 86, upperguide layer 88 of either InAlGaAs or InGaAsP, and upper cladding layer90 of p-InP. It should be noted that layers 82, 86 and 90 are shown ashaving a conductivity type. This is because these waveguides are part oflayers, for example, forming the active components 12, 14 and 16 onTxPIC chip 10, for example. Thus, it is within the scope of thisinvention to form a core waveguide, InP-based structure without suchconductivity types. Also, the channels or trenches 56 need not haveV-shaped bottoms 58 but may have flatter shaped bottoms. Also, it iswithin the scope of this invention that the V-shaped trench structureshown in FIGS. 10 and 11 may be formed in other material bases, otherthan In-based materials, such as a silicon substrate with silica or SiO₂waveguide core structures formed on the silicon substrate as known inthe art.

To be noted in a sequence from FIGS. 10 and 11, bottom 58 of trenches orchannels 56 become monotonically shallower in their progression towardfree space region 50. This progressional change can also be seen in FIG.9. Thus, trenches or channels 56 monotonically become shallower ordiminish toward free space region 50 providing an adiabatic, monotonicchange in refractive index as seen by the propagating light within thewaveguides and terminating in an optically coupled relationship withadjacent waveguides at or near a refractive index, n_(fs), at the edgeof free space region 50. This optically coupled region with adjacentwaveguides and the edge of free space region 50 is referred to as thetransition region. Such a monotonically shaped structure provides for asmooth adiabatic transition between waveguides 52 or 54 and free spaceregion 50 and thereby provides for significant reduction in insertionlosses at the waveguide/free space region interface region. FIGS. 10 and11 clearly exhibit the monotonic extinsion of the V-shaped groovebottoms of trenches 56 leading up to free space region 50.

It should be noted in this embodiment that is necessary is a monotonicreduction in the depth of trenches 56 between the waveguides 52 or amonotonic change in the channel side wall angle, such becoming morealigned to the horizontal, or a combination of both, in order to achievean adiabatic waveguide for propagating signal light resulting inachieving the lowest insertion loss.

Trenches 56 are formed by a two step etching process using the samesingle mask for both etching steps, unlike the two step etching processof J. H. den Beston et al, supra, which requires at least two differentmasks for two different etching steps. In forming trenches 56 in FIGS.9-11, the first etching step through upper cladding layer 52 and upperguide layer 88 is accomplished with an anisothropic etch to a firstdepth followed by an isotropic etch to a second depth using the samemask set for each etching set. The anisothropic etch, for example, maybe a dry etch, such as H₂, CH₄ and Ar gas. The isotropic etch may be awet etch, such as 10:1:1 mix of H₂O:H₂O₂:H₂SO₄. The first depth may bedefined by the thickness of upper cladding layer 52 and the second depthmay defined by a partial thickness of upper guide layer 88.

It should be importantly noted that the embodiment of FIGS. 9-11 is notlimited to free space regions such as employed in AWG components, suchas shown in FIG. 7. The technique can also be deployed with otherdevices having diverting or converting optical free space regions withaccompanying input and output waveguides such as power couplers, starcouplers, MMI couplers or Echelle gratings. Also, this technique canalso be applied to silicon-based devices having diverting or convertingoptical free space regions with accompanying input and output waveguidesemploying, of course, different etchants, which etchants are known inthe art.

Reference is now made to FIGS. 12 and 13 which illustrate a furtherembodiment for reducing insertion loss in the transition region betweenridge waveguides and a free space region such as illustrated in theprevious embodiment. As shown in FIGS. 12 and 13, a combination ofpassivation overlayers is deployed in connection with ridge waveguide96. In FIG. 12, a cross-section of the waveguide is illustrated outfarther from the free space region, such as, for example, at theposition of line 10-10 in FIG. 9. In FIG. 13, a cross-section of thewaveguide is illustrated closer to the free space region, such as, forexample, at the position of line 11-11 in FIG. 9. Ridge waveguide 96 inthese figures comprises an InP substrate 90 upon which is epitaxiallydeposited a lower cladding layer 92 of InP, waveguide core region 94,which may be InGaAsP or AlInGaAs, and an upper cladding layer of InP.After a selective etch to form ridge waveguide 96, a dielectric layer97, such as SiN_(x), SiO_(x) or Si_(x)ON_(y) (x, y≧0) is deposited orother such passivating material is formed, such as by CVD or other knownmethod, followed by spin-on BCB 98. Layer in this embodiment as well aslater embodiments may also be ZnS or ZnSe. The deposition of dielectriclayer 97 provides for better adhesion for the following passivationlayer 98 as well as provides for gradual change in the effectiverefractive index surrounding waveguide 96. To be noted is thatdielectric layer 92 monotonically increases in thickness as shown inFIG. 12 at 99A to a larger thickness depicted at 99B in FIG. 13. Thus,dielectric layer is deposited such that it monotonically becomes thickeras it progresses toward a coupled free space region thereby graduallychanging the effective refractive index profile to achieve the lowestinsertion loss. Do to this gradual change in thickness of dielectriclayer 97, the effective refractive index of layers 92, 97 and 98 willprovided lower insertion loss by adiabatically increasing the effectiverefractive index as experienced by the propagating signal light inwaveguide 96. The resulting effect is the easement of the effectiveindex step between narrow waveguide 96 and a larger free space region.The exemplary layers here are BCB layer 98 with n approximately equal to1.6, dielectric layer 96 with n in the range of about 1.8 to 2.0 andcladding InP layer 92 with n of about 3.5.

As previously indicated, the propagation loss of the ridge waveguidesdeployed in an AWG contributes significantly to insertion loss. In aridge waveguide AWG, the AWG is typically defined by anisotropicdry-etching to prevent any crystallographic etching that is commonlyencountered in using wet etches. This is desired since the waveguide inan AWG cannot be restricted to lie along a single crystal axes. Aconsequence of the dry etching process is that the side walls of theetched waveguide exhibit a finite characteristic roughness. Thisroughness, as known in the art, can contribute to increased scatteringloss which increases the propagation loss and, hence, the insertion lossof the AWG. This scattering loss is a function of the surface roughness(the size and density of the fabricated structural features) and therefractive index step between the waveguide and the overlayer ofcladding material. In a buried InP waveguide structure, the claddingmaterial is InP, rendering this effect relatively small. In a ridge InPwaveguide structure, the effect is magnified as a result of therelatively large index step between air (n=1) and the InP-basedwaveguide material (n˜3.3). The net effect of insertion loss due to theside wall roughness of any ridge waveguides deployed in a PIC can beminimize by employing a comparatively higher index cladding material,such as, BCB, where n˜1.6. In this connection, reference is again madeto FIG. 14 illustrating the deployment of BCB or ZnS or ZnSe in an AWGridge waveguide structure. However, it should be understood that BCB maybe used in connection with any other optical active or passive componentfor passivation and planarization such as previously explained inconnection with TxPIC chip 10 in FIG. 1. Also, as previously indicated,such passivation and planarization with these materials can be appliedto RxPIC chips 24 shown in FIG. 6.

In FIG. 14, the illustrated waveguide structure comprises an InPsubstrate 90 upon which is deposited lower cladding layer 92 of InP,waveguide core layer 94 comprising, for example, InGaAsP or AlInGaAs,and upper cladding layer 95 of InP. Then, to form a ridge waveguide,layers 94 and 95 are etched back with a mask over the ridge to beformed, e.g., using an anisothropic etch, resulting in ridge waveguidestructure 94. This structure may then be passivated with a comparativelyhigh refractive index material that also provides for goodplanarization. The materials of choice, as previously indicated, areshown in FIG. 14 comprising BCB, ZnS or ZnSe. After application of thispassivation layer 98, the layer may be planarized to the surface depthof the top of optical component features across the topography of thechip or PIC or, alternatively, to a predetermined height above the topof such features. If layer 98 is planarized to the top of such features,optionally, an overlayer 99 may be provided on the surface ofpassivating layer 98, such as Si₃N₄, SiO₂, Si_(x)ON_(y), polyimide orone of the materials for passivating layer 98 or any other organic orinorganic resin materials. Also, materials such as SiO_(x), SiO_(x),Si_(x)ON_(y) or polyimide may be provided as a layer between lowercladding layer 92 and passivation layer 98, such as illustrated in FIGS.12 and 13.

Planar device geometries are important in minimizing fabricationcomplexity. Geometries make the fabrication of complicated devicestructures difficult, for example, making circuit contacts to non-planardevices or features in a PIC chip are much more difficult thancontacting to a planar device. BCB is a mechanism that allows opticalridge type components that are inherently non-planar, as in the case ofridge waveguides or ridge SMLs, to be planarized as described herein.

Planar geometries for AWGs may be important for a variety of reasons. Ina PIC, an AWG may be integrated with other optical components, forexample, lasers, modulators, optical amplifiers, and/or detectors. It ishighly desirable to have planar geometries on as-grown PICs or devicesto help form contacts, routing to connections and interconnections,etc., in such PICs or devices. Thus, BCB, ZnS, or ZnSe may beadvantageously employed to passivate and/or planarize such devices orPICs which particularly include either or both active or passivecomponents such as a laser source or an AWG device. Furthermore,planarization of the AWG can provide a planar surface wherein an elementcan be placed over the BCB to serve as a heater or other PIC function totune the AWG or adjust, for example, its polarization insensitivity.Additionally, if the BCB is made sufficiently thick over an AWG so as tobe an electrically isolating, this will allow the routing of electricalsignals, such as via metal interconnect lines, over the AWG withoutaffecting its optical performance.

BCB is advantageous in that it provides a low-stress planarizationmaterial. However, it is not stress free and does not necessarilyprovide complete environmental or electrical passivation. In order toimprove these properties, BCB may be combined with other dielectricpassivation materials, for example, SiN_(x) or SiO_(x) as exemplified inFIGS. 12 and 13 as well as shown in FIG. 15. In FIG. 15, there isillustrated a ridge waveguide 96 with waveguide core 94 in the ridge, asin the case of FIGS. 12 and 13 except an initial and comparatively thin,first type, passivation layer 97(1) of SiO_(x), SiN_(x) or Si_(x)ON_(y)or other such passivating material is formed, such as by CVD or otherknown method, over the etched surface of lower cladding layer 92 andridge waveguide 96, followed by the deposition of a second type,passivating layer 98(1) of BCB or ZnS or ZnSe. Next, this is followed bythe deposition of a first type, passivating layer 97(2) followed by asecond type, passivating layer 98(2) and so on. The alternatingcombination of these two layers provides for combined adhesion as wellas improved combined passivation. The deployment of alternating layers97 and 98 directly on top of ridge waveguide 96 itself is optional,i.e., they can be extended only to be adjacent to waveguide ridge 96.However, if positioned as shown in FIG. 15, they provide for enhancedpassivation.

An advantage of employing this alternating BCB/dielectric coveringtechnique shown in FIG. 15 is also believed to improve the adhesion ofBCB to the AWG layers with the presence of an intermediary dielectriclayer 97(1).

BCB is also advantageous in that it is possible to cleave an InP-basedPIC chip with a BCB cladding overlayer, upon wafer singulation, withoutaffecting the qualities of the resulting cleave. However, this propertydoes not hold as the thickness of the BCB passivation/planarizationincreases, for example, for thicknesses approximately equal to orgreater than around 2 μm. For thicker BCB layers, it is desirable todefine linear “cleave streets” in the BCB as illustrated at 100 in FIG.19, down through the entire thick BCB layer 98 or at least to withinabout 2 μm of InP layer 95. The thick BCB layer 98 is at least partlyremoved or reduced in thickness in regions on the wafer where diecleaves are to be made, represented by dotted cleave line 102, forminglinear troughs or grooves 100 in the thick BCB layer 98. This techniqueimproves the cleave quality without significantly affecting the benefitsafforded by the employment of BCB as a passivation and planarizationmaterial. The same is true for the materials, ZnS and ZnSe.

It could be noted that the kind of ridge waveguides that may be utilizedin the practice of this invention include (a) deep-ridge, (b)shallow-ridge, and (c) rib-loaded slab geometries which are respectivelyillustrated in FIGS. 16, 17 and 18. As shown in these ridge waveguidedevices, BCB is provided to the non-planar spaces beside or between theridge waveguides. Optionally, the BCB may also cover the waveguidestructures as illustrated at 99. Instead of BCB, either ZnS or ZnSe canbe employed for such planarization and/or passivation.

With reference to FIG. 16, the waveguide structure shown is a deep-ridgewaveguide 96A, similar to that shown in FIG. 14. The ridge waveguidestructure shown in FIG. 17 is a shallow-ridge waveguide 96B. To be notedin FIG. 17 is that the waveguide core 94A is not part of the ridge, asit is in the case of FIG. 16, but is part of the bulk or slab. The ridgewaveguide 96B includes only upper cladding layer 96. Index guiding isprovided by the proximity of ridge 96B to the propagating mode.

The waveguide structure shown in FIG. 18 is a rib-loaded slab waveguide96C and comprises a slab waveguide 94A such as InGaAsP Or AlInGaAsformed between confinement layers 92 and 92A of InP. Waveguide 96Cincludes a higher index rib guiding layer 93, for example, of InGaAsP orAlInGaAs and upper cladding layer 95 of InP. Waveguide 96C provides forgreater optical mode confinement.

All of the ridge waveguides 96A, 96B and 96C of FIGS. 16-18 are shownpassivated with a layer 98 of BCB with an optional overlayer 99 of BCBthat may be provided with some planarization. Planarization in allembodiments here may be accomplished, for example, by RIE.

While the invention has been described in conjunction with severalspecific embodiments, it is evident to those skilled in the art thatmany further alternatives, modifications and variations will be apparentin light of the foregoing description. For example, beside thedeployment of InGaAsP/InP regime, described relative to the structuresfor an AWG disclosed in this application, the InGaAs/InP regime or theInAlGaAs/InP regime can also be deployed in this invention as thematerial structures for the AWG with passivation and/or planarizationwith BCB. Also, the deployment of BCB, ZnS or ZnSe in this inventionneed not be limited to AWGs but can also be applied to other active orpassive components as discrete devices or as integrated in an opticalcircuit such as Group III-V semiconductor photonic devices and PICs andsilicon-based photonic devices and PICs. Also, it is within the scope ofthis invention of employing other dielectric or fill materials, otherthan BCB, ZnS and ZnSe, such as polyimides, acryls, polyamides, orpolyimide-amids, or other applicable organic or inorganic resinmaterials where the refractive index is suitable for the particular PICor device application in leading to lower insertion loss. Also, theplanarization and via process deployed in this invention may also bedeployed in electrical integrated circuits (ICs), other than photonicintegrated circuits such as those employing silicon-based technology, sothat the invention claimed herein is not just limited to photonicintegrated circuits which are shown in the several embodiments hereinfor the purposes of illustrating the invention. Also, as known in theart, the p and n type conductivity of the Group III-V cladding,confinement and contact layers can be reversed. Thus, the inventiondescribed herein is intended to embrace all such alternatives,modifications, applications and variations as may fall within the spiritand scope of the appended claims.

1. A method for forming an arrayed waveguide grating (AWG) with at leasttwo free space regions coupled by a plurality of grating arms with apassivation layer overlying the AWG and having a plurality of inputs toreceive a plurality of channel signals separated by a predeterminedchannel spacing, comprising the step of choosing the depth of thepassivation layer over the grating arms of the AWG to be defined by theTE-TM wavelength shift between TE and TM modes propagating through thearrayed waveguide grating being approximately less than or equal to 20%of a magnitude of the channel spacing.
 2. The arrayed waveguide grating(AWG) of claim 1 wherein said AWG is Group III-V-based or silicon basedAWG.
 3. The arrayed waveguide grating (AWG) of claim 2 wherein said AWGis InP-based AWG.
 4. The arrayed waveguide grating (AWG) of claim 4wherein said channel spacing is 50 GHz, 100 GHz or 200 GHz.
 5. Anarrayed waveguide grating (AWG) comprising: at least two free spaceregions; a plurality of grating arms extending between said at least twospace regions; a passivation layer formed over the arrayed waveguidegrating; a plurality of inputs at least to one of said free spaceregions to receive a plurality of channel signals separated by apredetermined channel spacing; a depth of said passivation layer chosenby providing a TE to TM wavelength shift between TE and TM modespropagating through the arrayed waveguide grating being approximatelyless than or equal to 20% of a magnitude of the channel spacing.
 6. Thearrayed waveguide grating (AWG) of claim 5 wherein said AWG is GroupIII-V-based or silicon based AWG.
 7. The arrayed waveguide grating (AWG)of claim 6 wherein said AWG is InP-based AWG.
 8. The arrayed waveguidegrating (AWG) of claim 5 wherein said channel spacing is 50 GHz, 100 GHzor 200 GHz.